Copper Infiltrated Diamond Metal Matrix Composite (Cu-Diamond) for Semiconductor Laser / LED

Our Diamond-Copper Composite (Cu-Diamond) is a high-performance thermal management material manufactured by powder metallurgy – mixing diamond particles with copper powder, followed by high-temperature high-pressure (HTHP) or spark plasma sintering (SPS) process. It combines the ultra-high thermal conductivity of diamond with the excellent workability of copper, offering an ideal solution for next-generation high-power electronic devices.

Key Features

• Ultra-High Thermal Conductivity
  Achieves 600–950 W/(m·K) – 1.5 to 2.5 times higher than pure copper (400 W/(m·K)).

• Tailored CTE (Coefficient of Thermal Expansion)
  Tunable from 5 to 10×10-6/K, precisely matching GaN, SiC, and Si chips. This minimizes thermal stress and improves long-term reliability.

• Low Density & Lightweight
  Density 5.0–7.0 g/cm³ – about 40% lighter than conventional W-Cu alloys.

• Good Mechanical Strength
  Bending strength > 278 MPa, excellent thermal cycling stability (performance drop <1% after 100 cycles).

• Surface Metalization Compatible
  Ready for direct bonding or soldering onto chips and heat sinks.

Typical Specifications

Applications

• AI & High-Performance Computing
  Heat spreader for GPUs, AI accelerators, CPUs – reduces hotspot temperature by 10–20℃.

• Power Electronics
  Substrate or heat sink for IGBT, MOSFET, SiC power modules in EV (electric vehicles) and high-speed rail.

• 5G / RF Communication
  Thermal management for RF power amplifiers in 5G base stations and phased array radar.

• High-Power Lasers
  Heat sink for laser diodes and fiber laser systems – CTE matches laser chip for stable output.

• Aerospace & Defense
  Lightweight, high-thermal-conductivity packaging for satellites, avionics, and missile electronics.

Manufacturing Process (Brief)

We use powder pressing + high-temperature sintering with advanced interface modification. Diamond particles are pre-coated with carbide-forming elements (Cr, Ti, W) to ensure strong bonding with copper matrix. This key step raises thermal conductivity from ~127 W/(m·K) (untreated) to over 600 W/(m·K).

Why Choose Us?

• Customizable: CTE, size, thickness, and diamond volume fraction tailored to your chip design.

• Cost-Effective: Mass production capability with competitive pricing.

• Quality Assurance: 100% inspection of thermal conductivity, CTE, and density before shipment.

• Fast Lead Time: Samples in 7–10 days, mass production in 3–4 weeks.

Order & Customization Information

• MOQ: 10 pieces (sample order accepted)

• Sample Policy: Samples available – please contact for pricing

• Customization: OEM & ODM – drawing or sample based

• Lead Time: 10–20 working days after order confirmation