| Suggested application | Secure communication |
| Next generation of sensors | |
| For use for single NV measurement | |
| Quantum applications including magnetic field sensing and quantum computing | |
| Radiation particle detection in beam loss monitoring, | |
| Radiotherapy dosimetry | |
| Neutron detection | |
| Such as RF diodes, BJT, FET, MEMS | |
| Model: | Electronic cvd |
| Crystal growth process: | single crystal CVD |
| Color: | Colorless |
| Key product features: | •highest purity material, low damage polished surfaces •the lowest N and NV centre density. • Low absorption • Chemically inert and operates in corrosive environments • Biocompatiblity • Scratch resistant • Low birefringence • Highest Raman gain coefficient • Thicknesses available up to 3 mm • Single crystal path length >10 mm . |
| Benefits： | •highest purity material • High quality surface finishes on abrasive • Outperforms natural diamond due to its consistent and predictable material properties • Offers superior edge quality in ultra-precision machining operations • Good NV |
| Orientation： | 4pt/100 |
| Shape: | Square |
| Size range: | 2-9 mm (single crystal CVD diamond), Thickness: 0.05-3mm, up to 7*7*2 and 9*9*1.5 |
| Edges | Laser Cut |
| Edge Orientation | <100> edges |
| Face Orientation | {100} faces |
| Laser Kerf | 3-5° |
| Lateral Tolerance: | +0.1/-0 mm |
| Side 1, Roughness, Ra | polished, Ra < 10 nm |
| Side 2, Roughness, Ra | polished, Ra <10 nm |
| Thickness Tolerance | +/- 0.05 mm |
| Boron Concentration [B]: | <1PPB |
| Nitrogen Concentration: | < 10-50PPB |
| Charge Collection Efficiency (CCE): | Typically >95% |
| Charge Collection Distance (CCD): | Typically >475µm, @0.5 V µm-1 applied field, for 500 µm plate. |
MCD Diamond CVD Diamond Polished Diamond Rough Diamond Diamond Abrasive PCD & PDC