Tel: +86-731-83521833        Mobile: +86 13574841950         info@chenguangjd.cn

Boron Doped Diamond: CVD Single Crystal for Semiconductors & High-Power Electronics
Home » Boron Doped Diamond: CVD Single Crystal for Semiconductors & High-Power Electronics

Videos Detail

Boron Doped Diamond: CVD Single Crystal for Semiconductors & High-Power Electronics

This video introduces our high-quality Boron Doped Diamond (BDD) – single crystal CVD diamond with precisely controlled boron doping.


What is Boron Doped Diamond?

Boron Doped Diamond is created by introducing boron atoms into the diamond crystal lattice during chemical vapor deposition (CVD), replacing some carbon atoms . This doping process transforms diamond from an electrical insulator into a p-type semiconductor while preserving all of diamond's extraordinary intrinsic properties.


Key Properties of Our BDD Material:

·Tunable Conductivity: By controlling boron concentration, we can adjust the electrical resistivity across a wide range – from semi-insulating to metallic-like conductivity . Highly doped material achieves resistivity below 20 mΩ·cm .

·P-Type Semiconductor Behavior: Boron acts as an acceptor impurity, creating a shallow energy level above the valence band and providing hole carriers . This makes it ideal for electronic device applications.

·Exceptional Thermal Management: Diamond possesses the highest thermal conductivity of any bulk material (~2200 W/m·K) . Our BDD retains this property, with highly conductive grades offering thermal conductivity around 700 W/m·K – perfect for heat spreading applications .

·Extreme Hardness & Chemical Stability: BDD maintains diamond's legendary hardness and chemical inertness, making it resistant to harsh environments, corrosion, and wear .

·Low Surface States: The stable surface chemistry provides an ideal platform for advanced electronic and sensing applications.


Advanced Applications:

Our Boron Doped Diamond is designed for cutting-edge technology sectors:

·High-Power Electronics: As a wide bandgap semiconductor (~5.5 eV), diamond devices can operate at high voltages and temperatures far beyond silicon . BDD enables diamond-based MOSFETs, Schottky diodes, and high-voltage switches capable of operation above 500°C .

·RF and Microwave Devices: BDD heat spreaders for RF/microwave devices enable better ground plane isolation and reduced conductive losses . Ideal for 5G systems, satellite communications, and defense radar .

·Thermal Management: As an electrically conductive heat spreader, BDD replaces traditional metal/diamond configurations. Mounting high-power chips on BDD spreads heat efficiently while providing electrical functionality .

·Advanced Electrodes: For supercapacitors, electrochemical sensing, and applications requiring stable, corrosion-resistant electrodes with wide electrochemical windows.


Watch the video to see how our Boron Doped Diamond delivers diamond's extreme performance with engineered conductivity for next-generation electronics.


HAVE A QUESTION?
CONTACT US NOW
We are always happy to answer all your questions.

Social Links

Diamonds Category

About Us

Contact Us
Office Address: Yuhua District,
Changsha City, Hunan Province, China
Factory address: Yanling,
Zhuzhou City,Hunan Province, China
Tel: +86-731-83521833 / +86-731-83521533
Copyright © 2021 INFI ADVANCED MATERIALS CO.,LTD      Sitemap      Technology By Leadong