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This video introduces our Boron Doped Diamond for Semiconductor – single crystal CVD diamond precisely doped to transition from an insulator to a high-performance p-type semiconductor.
Pure diamond is an exceptional insulator. But when boron atoms are introduced into the crystal lattice, it becomes conductive. The resulting material offers high stability, high breakdown field strength, and high hole mobility – properties that make it a promising candidate for next-generation power electronics and high-frequency devices.
Precise Doping Control:
We offer boron-doped diamond across a wide concentration range, from light doping (around 1×10¹⁷ cm⁻³) to heavy doping (up to 1×10²⁰ cm⁻³), with tight process control.
Low-concentration boron-doped diamond delivers high hole mobility, making it ideal as the active material for semiconductor devices such as Schottky diodes and field-effect transistors
High-concentration boron-doped diamond offers very low resistivity, making it suitable for ohmic contact electrodes and interconnect layers
From Lab to Production:
Diamond semiconductors are no longer just a research curiosity. Our Boron Doped Diamond for Semiconductor materials are available in production quantities, supporting the transition from laboratory exploration to commercial device fabrication.
Watch the video to learn more about how our boron-doped single crystal diamond can enable your next-generation semiconductor designs. Contact us to discuss your specific doping concentration, size, and integration requirements.
