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Introduction and Application of CVD Polycrystalline Diamond-Copper Composite Sheets:
CVD polycrystalline diamond-copper composite sheets are high-performance thermal management materials. They are produced by coating a layer of copper onto polycrystalline diamond using Chemical Vapor Deposition (CVD) technology. This combines the advantages of both materials: the ultra-high thermal conductivity of diamond rapidly extracts heat from the chip, while the good workability and solderability of copper effectively transfer that heat to an external heatsink.
This material can be understood as a "synergistic" composite. Its core properties are as follows:
| Component | Key Properties | Function in the Composite Sheet |
|---|---|---|
| CVD Polycrystalline Diamond Layer | Thermal Conductivity: 1200-2200 W/(m·K); CTE: approx. 1.0-1.2 ×10⁻⁶/K | Primary Heat Spreading: Acts as a "superhighway" for heat, rapidly spreading localized hot spots from the chip laterally. |
| Copper Layer | Thermal Conductivity: approx. 400 W/(m·K); CTE: approx. 17 ×10⁻⁶/K | Functional Interface: Provides a solderable surface for assembly onto circuit boards; also assists in transferring heat to the external heatsink. |
| Overall Composite | Effective Thermal Conductivity: approx. 600-1200 W/(m·K); Tunable CTE: 3-8 ×10⁻⁶/K | Balanced Performance: Overall thermal conductivity far exceeds that of copper (2-3 times higher), while the CTE better matches chips (e.g., GaN, SiC), reducing thermal stress and improving long-term reliability. |
The application of CVD diamond-copper sheets focuses on areas requiring extremely high heat dissipation or where space for cooling is minimal.
| Application Area | Specific Use & Value |
|---|---|
| AI & High-Performance Computing | Serves as a thermal spreader directly beneath AI chips (GPUs) to quickly absorb and diffuse hotspot heat, preventing throttling due to overheating. |
| 5G/6G RF & Communications | Used for cooling RF power amplifiers in 5G base stations and phased-array radars. Diamond's electrical insulation prevents interference with high-frequency signals. |
| EVs & Power Electronics | Used in EV powertrain control systems (e.g., SiC MOSFET modules) and fast-charging systems to ensure stable operation under 800V high-voltage platforms. |
| High-Power Lasers | Acts as a heat sink for laser diodes, efficiently extracting heat from the chip's active region to ensure stable output and lifespan. |
| Aerospace & Advanced Tech | Utilized for its high-temperature resistance, radiation resistance, and ultra-high thermal conductivity in satellite/spacecraft electronics cooling, and even for cooling qubits in quantum computing. |
Size Available:
| Thermal Conductivity | ≥600 W/mK |
| Thermal Expansion Coefficient | 4.5-8 ppm/K（adjustable） |
| Density | 5.6 g/cm3 |
| Surface Modification | Chrome, Nickel |
| Transition Layer | Titanium, Platinum |
| Contact Layer | Gold, Copper |
| Crystallographic Orientation | 100 110 111 |
| Miscut for Main Face Orientation | ±3° |
| Common Product Size | 3mm×5mm×0.5mm |
| Transverse Tolerance | ±0.05mm |
| Thickness Tolerance | ±0.1mm |
| Edge Cutting | Laser Cutting |
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