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JSD
INFI
Characteristics of CVD Single-Crystal Boron-Doped Diamond (SC-BDD)
The defining feature is the introduction of boron atoms into the diamond lattice during Chemical Vapor Deposition, substituting for carbon atoms. This imparts unique properties:
Mechanism: Boron acts as an acceptor impurity, creating a shallow energy level (~0.37 eV above the valence band). It provides hole charge carriers, making it a p-type semiconductor.
Wide Resistivity Range: By controlling the boron doping concentration ([B]), the electrical resistivity can be precisely tuned over many orders of magnitude-from semi-insulating to metallic-like conductive.
Wide Electrochemical Potential Window: In aqueous solutions, SC-BDD electrodes exhibit an extremely wide potential window (~3.5 V), far surpassing conventional electrodes like platinum or glassy carbon. This allows for the detection or generation of species that are inaccessible with other materials.
Low Background Current & High Stability: It has a very low capacitive current and is highly inert, resisting surface oxidation, fouling, and corrosion even under harsh electrochemical conditions.
Despite doping, it retains the core advantages of single-crystal diamond:
Highest Thermal Conductivity (enabling superb heat dissipation).
Extreme Hardness & Wear Resistance.
Outstanding Chemical Inertness (resistant to strong acids/bases).
Superior Biocompatibility.
High Radiation Hardness.
High Carrier Mobility.
The hydrogen-terminated or oxygen-terminated surface is chemically stable with low surface state density, making it an ideal, stable platform for sensing.
The applications leverage the synergy of its novel conductivity with diamond's native extreme properties.
Advanced Electrochemical Oxidation: Used as the anode material for wastewater treatment. It generates powerful hydroxyl radicals (•OH) to efficiently mineralize persistent organic pollutants (pharmaceuticals, pesticides, dyes) with negligible electrode erosion.
High-Performance Electrochemical Sensing: Excellent for simultaneous detection of biomolecules (dopamine, uric acid, ascorbic acid) and heavy metal ions due to its wide window separating overlapping signals. Used in neurochemical and environmental monitoring.
Electrosynthesis: For synthesizing high-value oxidants like ozone or hydrogen peroxide with high Faradaic efficiency and purity.
Electrochemical Energy Storage: As an electrode material for supercapacitors or specialized batteries, offering long cycle life and stability.
Power Devices: As the p-type layer in diamond-based Schottky diodes, junction field-effect transistors, and high-voltage switches. Operable at temperatures > 500°C and in high-radiation environments (aerospace, nuclear, downhole drilling).
Monolithic Thermal-Electrical Substrates: Heavily doped BDD can serve as both an ultra-high thermal conductivity heat spreader and a conductive interconnect or electrode, enabling integrated thermal and electrical management for RF amplifiers and high-power chips.
High-Temperature Sensors: Its temperature-dependent resistivity is used for robust thermometry in engines, reactors, and turbines.
Radiation Detectors: As a p-type contact layer in alpha, beta, X-ray, and neutron detectors, benefiting from diamond's radiation hardness and fast response.
Biochemical Sensors: Platform for label-free, implantable, or in-vitro biosensors due to biocompatibility and stable electrochemical interface.
Micro-Electrical Discharge Machining (µ-EDM) Electrodes: Its wear resistance ensures high precision and long tool life for micromachining.
Low-Wear Electrical Contacts: For sliding contacts in extreme environments where reliability is critical.

Size Available:
| Crystal growth process: | Mono crystal CVD diamond |
| Color: | Normal grade - Near colorless, Mechanic grade - Brown |
| Advantage: | 1) Regular shape, uniform size. The size can be strictly controlled according to customer needs. |
| 2) High repurchase rate and high cost performance, well received by customers. | |
| 3) No visible growth lines,under 100x microscope, no black spots, no impurities, no crack. | |
| 4) The stress is good, the number of times of reuse is high, and it is not easy to crac | |
| Size | 7*7 8*8 9*9 10*10 11*11 12*12 13*13 14*14 -20*20 Thickness: 0.05-3mm |
| Orientation: | 4pt/100 |
| Shape: | Square,Triangles, rectangles, swords |
| Lateral Dimensions Measured | to smaller side |
| Edges | Laser Cut |
| Laser Kerf | < 3° |
| Lateral Tolerance: | +0.1/-0 mm |
| Roughness, Ra | 1. Two sides polished, Ra <10- 30 nm |
| 2. One side polished, the other size is The other side is the cutting surface, or grow | |
| 3.Both sides are unpolished |
| Thermal Conductivity | ≥600 W/mK |
| Thermal Expansion Coefficient | 4.5-8 ppm/K(adjustable) |
| Density | 5.6 g/cm3 |
| Surface Modification | Chrome, Nickel |
| Transition Layer | Titanium, Platinum |
| Contact Layer | Gold, Copper |
| Crystallographic Orientation | 100 110 111 |
| Miscut for Main Face Orientation | ±3° |
| Common Product Size | 3mm×5mm×0.5mm |
| Transverse Tolerance | ±0.05mm |
| Thickness Tolerance | ±0.1mm |
| Edge Cutting | Laser Cutting |
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