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SCD23、SCD13、SCD22、SCD11
INFI
Applications
BDD (Boron-Doped Diamond) electrodes excel in degrading complex organic pollutants across industries:
Pharmaceutical/Chemical Waste
Petrochemical & Coking Byproducts
Textile Dyes & Tanning Effluents
Landfill Leachate & Explosive Residues
Pulp/Paper & Distillery Wastewater
| No. | Product Name | Substrates | Specs | Unit |
| 1 | BDD Electrode | Silicon, single side coated | 5*5*0.55mm | Piece |
| 2 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 2 holes open | Piece |
| 3 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 4 holes open | Piece |
| 4 | BDD Electrode | Silicon, double side coated | 8*6*1 Slotting | Piece |
| 5 | BDD Electrode | Silicon, double side coated | 7*7*0.5mm | Piece |
| 6 | BDD Electrode | Silicon, single side coated | 10*10*0.625mm | Piece |
| 7 | BDD Electrode | Silicon, double side coated | 10*10*0.625mm | Piece |
| 8 | BDD Electrode | Silicon, double side coated | 10*10*0.5mm | Piece |
Performance Advantages
Superior Efficiency: Outperforms PbO₂/Pt electrodes in organic degradation with 30% lower energy consumption
Eco-Safe Ozone Generation: Electrolyte-free ozone production for water purification
Extreme Durability: Resists corrosion in aggressive chemical environments
Semiconductor Properties
Ultrawide Bandgap: 5.47 eV (5× silicon’s 1.1 eV) enables high-temperature/high-frequency device operation
Thermal Conductivity: 2,200 W/mK (5× copper) reduces component size/weight in amplifiers & lasers
Electron Mobility: Highest hole mobility among wide-bandgap materials, ideal for millimeter-wave ICs
Technical Metrics
Johnson Index: 8,200 (vs. 410 for SiC)
Baliga Index: Optimal for power switching systems
Negative Electron Affinity: Enables cold cathode applications
Key Features
Adjustable Thermal Conductivity: 1,000–1,800 W/mK (9× silicon’s 139 W/mK)
Precision Engineering:
Thickness Tolerance: ±25 μm
Surface Flatness: <4 μm/cm
Growth Side Finish: <100 nm Ra
Nucleation Side Finish: <30 nm Ra
Standard Specifications
Dimensions: Up to Ø65 mm (customizable)
Thickness:
Raw: 0.3–1.5 mm
Polished: 0.2–1.0 mm
Density: 3.5 g/cm³
Young’s Modulus: 1,000–1,100 GPa
Thermal Applications
High-power laser diode mounts
Integrated circuit heat spreaders
Compact thermal solutions for aerospace electronics
Applications
BDD (Boron-Doped Diamond) electrodes excel in degrading complex organic pollutants across industries:
Pharmaceutical/Chemical Waste
Petrochemical & Coking Byproducts
Textile Dyes & Tanning Effluents
Landfill Leachate & Explosive Residues
Pulp/Paper & Distillery Wastewater
| No. | Product Name | Substrates | Specs | Unit |
| 1 | BDD Electrode | Silicon, single side coated | 5*5*0.55mm | Piece |
| 2 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 2 holes open | Piece |
| 3 | BDD Electrode | Silicon, double side coated | 5*5*1.0mm 4 holes open | Piece |
| 4 | BDD Electrode | Silicon, double side coated | 8*6*1 Slotting | Piece |
| 5 | BDD Electrode | Silicon, double side coated | 7*7*0.5mm | Piece |
| 6 | BDD Electrode | Silicon, single side coated | 10*10*0.625mm | Piece |
| 7 | BDD Electrode | Silicon, double side coated | 10*10*0.625mm | Piece |
| 8 | BDD Electrode | Silicon, double side coated | 10*10*0.5mm | Piece |
Performance Advantages
Superior Efficiency: Outperforms PbO₂/Pt electrodes in organic degradation with 30% lower energy consumption
Eco-Safe Ozone Generation: Electrolyte-free ozone production for water purification
Extreme Durability: Resists corrosion in aggressive chemical environments
Semiconductor Properties
Ultrawide Bandgap: 5.47 eV (5× silicon’s 1.1 eV) enables high-temperature/high-frequency device operation
Thermal Conductivity: 2,200 W/mK (5× copper) reduces component size/weight in amplifiers & lasers
Electron Mobility: Highest hole mobility among wide-bandgap materials, ideal for millimeter-wave ICs
Technical Metrics
Johnson Index: 8,200 (vs. 410 for SiC)
Baliga Index: Optimal for power switching systems
Negative Electron Affinity: Enables cold cathode applications
Key Features
Adjustable Thermal Conductivity: 1,000–1,800 W/mK (9× silicon’s 139 W/mK)
Precision Engineering:
Thickness Tolerance: ±25 μm
Surface Flatness: <4 μm/cm
Growth Side Finish: <100 nm Ra
Nucleation Side Finish: <30 nm Ra
Standard Specifications
Dimensions: Up to Ø65 mm (customizable)
Thickness:
Raw: 0.3–1.5 mm
Polished: 0.2–1.0 mm
Density: 3.5 g/cm³
Young’s Modulus: 1,000–1,100 GPa
Thermal Applications
High-power laser diode mounts
Integrated circuit heat spreaders
Compact thermal solutions for aerospace electronics
