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BDD electrode | High-Performance Monocrystalline Diamond BDD Electrode for Water Treatment and Purification
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BDD electrode | High-Performance Monocrystalline Diamond BDD Electrode for Water Treatment and Purification

Boron doped diamond (BDD), also known as boron doped diamond, is a new type of electrode material prepared by doping boron elements into diamond films through techniques such as chemical vapor deposition (CVD). This material not only inherits many excellent properties of natural diamond, such as high hardness, high thermal conductivity, and chemical inertness, but also obtains good conductivity and semiconductor properties through boron doping. These unique properties have demonstrated enormous application potential for BDD in multiple high-tech fields.
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  • SCD23、SCD13、SCD22、SCD11

  • INFI

BDD Electrodes: Revolutionizing Wastewater Treatment

Applications
BDD (Boron-Doped Diamond) electrodes excel in degrading complex organic pollutants across industries:

  • Pharmaceutical/Chemical Waste

  • Petrochemical & Coking Byproducts

  • Textile Dyes & Tanning Effluents

  • Landfill Leachate & Explosive Residues

  • Pulp/Paper & Distillery Wastewater


 

No. Product Name Substrates Specs Unit
1 BDD Electrode Silicon, single side coated 5*5*0.55mm Piece
2 BDD Electrode Silicon, double side coated 5*5*1.0mm
2 holes open		 Piece
3 BDD Electrode Silicon, double side coated 5*5*1.0mm
4 holes open		 Piece
4 BDD Electrode Silicon, double side coated 8*6*1
Slotting		 Piece
5 BDD Electrode Silicon, double side coated 7*7*0.5mm Piece
6 BDD Electrode Silicon, single side coated 10*10*0.625mm Piece
7 BDD Electrode Silicon, double side coated 10*10*0.625mm Piece
8 BDD Electrode Silicon, double side coated 10*10*0.5mm Piece


Performance Advantages

  • Superior Efficiency: Outperforms PbO₂/Pt electrodes in organic degradation with 30% lower energy consumption

  • Eco-Safe Ozone Generation: Electrolyte-free ozone production for water purification

  • Extreme Durability: Resists corrosion in aggressive chemical environments



Semiconductor Properties

  • Ultrawide Bandgap: 5.47 eV (5× silicon’s 1.1 eV) enables high-temperature/high-frequency device operation

  • Thermal Conductivity: 2,200 W/mK (5× copper) reduces component size/weight in amplifiers & lasers

  • Electron Mobility: Highest hole mobility among wide-bandgap materials, ideal for millimeter-wave ICs

Technical Metrics

  • Johnson Index: 8,200 (vs. 410 for SiC)

  • Baliga Index: Optimal for power switching systems

  • Negative Electron Affinity: Enables cold cathode applications

CVD Polycrystalline Diamond: Thermal Management Redefined

Key Features

  • Adjustable Thermal Conductivity: 1,000–1,800 W/mK (9× silicon’s 139 W/mK)

  • Precision Engineering:

    • Thickness Tolerance: ±25 μm

    • Surface Flatness: <4 μm/cm

    • Growth Side Finish: <100 nm Ra

    • Nucleation Side Finish: <30 nm Ra

Standard Specifications

  • Dimensions: Up to Ø65 mm (customizable)

  • Thickness:

    • Raw: 0.3–1.5 mm

    • Polished: 0.2–1.0 mm

  • Density: 3.5 g/cm³

  • Young’s Modulus: 1,000–1,100 GPa

Thermal Applications

  • High-power laser diode mounts

  • Integrated circuit heat spreaders

  • Compact thermal solutions for aerospace electronics


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